ELECTRONIC CONDUCTION AND SWITCHING IN CHALCOGENIDE GLASSESOWEN AE; ROBERTSON JM.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 2; PP. 105-122; BIBL. 76 REF.Serial Issue

MEMORY SWITCHING IN A TYPE I AMORPHOUS CHALCOGENIDETHORNBURG DD.1973; J. ELECTRON. MATER.; U.S.A.; DA. 1973; VOL. 2; NO 1; PP. 3-15; BIBL. 18 REF.Serial Issue

DIRECT OBSERVATION OF SWITCHING PHENOMENA IN MEMORY-TYPE MATERIALS BY ELECTRON MICROSCOPYCHAUDHARI P; LAIBOWITZ RB.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 12; NO 2; PP. 239-242; BIBL. 4 REF.Serial Issue

ETUDE DES CARACTERISTIQUES STATIQUES I-V DE FORME "S" DE DISPOSITIFS DE COMMUTATION A BASE DE VERRE AU CHALCOGENURESHVETS GA; MAKHINYA LN; SHKUT VA et al.1973; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1973; NO 11; PP. 81-84; BIBL. 7 REF.Serial Issue

PULSE RESPONSE OF THE CONDUCTING CHANNEL IN THERMALLY SWITCHING GLASS FILMSSCHUOCKER D; SABATHY W; LANGER H et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 6; PP. 2647-2650; BIBL. 4 REF.Serial Issue

PRESWITCHING ELECTRICAL PROPERTIES, "FORMING", AND SWITCHING IN AMORPHOUS CHALCOGENIDE ALLOY THRESHOLD AND MEMORY DEVICESBOSNELL JR; THOMAS CB.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 11; PP. 1261-1271; H.T. 4; BIBL. 14 REF.Serial Issue

SWITCHING PHENOMENA IN THE GLASSES OF THE SYSTEM GE₃₀SE_70-XTE_XNODA M; MARUNO S; YAMADA T et al.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 10; PP. 1584-1585; BIBL. 2 REF.Serial Issue

THE ON-STATE IN CHALCOGENIDE THRESHOLD SWITCHESLEE SH.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 11; PP. 544-546; BIBL. 10 REF.Serial Issue

PRESERVATION OF THRESHOLD ON-REGIME IN AMORPHOUS SEMICONDUCTOR THRESHOLD SWITCHVEZZOLI GC; CALELLA P; DOREMUS W et al.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 1; PP. 341-346; BIBL. 7 REF.Serial Issue

THRESHOLD SWITCHING IN CHALCOGENIDE GLASS FILMSLEE SH; HENISCH HK.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 5; PP. 230-231; BIBL. 16 REF.Serial Issue

REVERSIBLE THERMAL BREAKDOWN AS A SWITCHING MECHANISM IN CHALCOGENIDE GLASSESWARREN AC.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 2; PP. 123-131; BIBL. 52 REF.Serial Issue

THE ON-STATE IN THRESHOLD SWITCHESPRYOR RW.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 3; PP. 425-426; BIBL. 8 REF.Serial Issue

AC CONDUCTIVITY OF AMORPHOUS AS₂SE₃KITAO M.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 10; PP. 1472-1479; BIBL. 18 REF.Serial Issue

RELAXATION PROCESSES IN THE CHALCOGENIDE GLASS THRESHOLD SWITCHESLEE SH; HENISCH HK.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 2; PP. 155-160; H.T. 1; BIBL. 17 REF.Serial Issue

DOSAGE D'ARSENIC ET SOUFRE DANS DES VERRES CHALCOGENURES AS-S, PAR FLUORESCENCE DE RXOOBA S.1974; JAP. ANALYST; JAP.; DA. 1974; VOL. 23; NO 12; PP. 1517-1521; ABS. ANGL.; BIBL. 11 REF.Article

THE APPLICATION OF AMORPHOUS MATERIALS TO COMPUTER MEMORIESNEALE RG; ASELTINE JA.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 2; PP. 195-205; BIBL. 22 REF.Serial Issue

ACCUMULATION EFFECTS IN AN AMORPHOUS CHALCOGENIDE THIN-FILM SWITCHCSILLAG A.1973; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 2; PP. 157-160; BIBL. 20 REF.Serial Issue

FREQUENCY-DEPENDENT CONDUCTIVITY AND CAPACITANCE IN CHALCOGENIDE THIN FILMSSUNTOLA T; TIAINEN OJA; VALKIAINEN M et al.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 12; NO 2; PP. 227-230; BIBL. 14 REF.Serial Issue

INTERPRETATION OF PRESWITCHING BEHAVIOUR OF CHALCOGENIDE-GLASS SWITCHES IN TERMS OF A SPACE-CHARGE-INJECTION MECHANISMALLISON J; DAWE VR.1972; ELECTRON. LETTERS; G.B.; DA. 1972; VOL. 8; NO 17; PP. 437-439; BIBL. 5 REF.Serial Issue

LIGHT-INDUCED MEMORY EFFECT IN CU-AS-SE GLASSESASAHARA Y; IZUMITANI T.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 11; PP. 1748; BIBL. 4 REF.Serial Issue

FILAMENTARY PATHS FORMED ON SURFACES OF THE CHALCOGENIDE GLASSES = CHEMINS FILAMENTAIRES FORMES SUR DES SURFACES DE VERRES AUX CHALCOGENIDESMATSUSHITA T; YAMAGAMI T; OKUDA M et al.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 7; PP. 923-930; BIBL. 16 REF.Serial Issue

THE SWITCHING BEHAVIOR OF CHALOOGENIDE GLASS WITH SEMICONDUCTING ELECTRODESSTIEGLER H; HABERLAND DR.sdJ. NON-CRYST. SOLIDS; NETHERL.; DA. (197; VOL. 11; NO 2; PP. 147-152; BIBL. 10 REF.Serial Issue

Chalcogenide glass photonic devicesLUTHER-DAVIES, Barry; FREEMAN, Darren; YINLAN RUAN et al.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol2, 921-922Conference Paper

Planar defects in three-dimensional chalcogenide glass photonic crystalsNICOLETTI, Elisa; BULLA, Douglas; LUTHER-DAVIES, Barry et al.Optics letters. 2011, Vol 36, Num 12, pp 2248-2250, issn 0146-9592, 3 p.Article

OPERATION AND PERFORMANCE OF AMORPHOUS SELENIUM-BASED PHOTORECEPTORSTABAK MD; ING SW; SCHARFE ME et al.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 2; PP. 132-139; BIBL. 13 REF.Serial Issue